Replacement metal gate transistor with controlled threshold voltage

摘要

A method and structure for a semiconductor device includes a semiconductor substrate and an N-channel transistor and a P-channel transistor provided on the semiconductor substrate. Each of the N-channel transistor and the P-channel transistor has a gate dielectric film on the semiconductor substrate, and a gate electrode is formed on the gate dielectric. The gate electrode comprises a metal conductive layer. The oxygen concentration in the metal conductive layer for the N-channel transistor is different from that for the P-channel transistor.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; and an N-channel transistor and a P-channel transistor provided on the semiconductor substrate, each of the N-channel transistor and the P-channel transistor respectively having a gate dielectric film on said semiconductor substrate, and a gate electrode respectively formed on said gate dielectric, wherein each said gate electrode comprises a metal conductive layer, wherein an oxygen concentration in said metal conductive layer for the N-channel transistor differs from that for the P-channel transistor, wherein said metal conductive layer includes a component which serves to provide a work function metal having a strong bond with oxygen so as to provide a high thermal stability, and wherein said component providing a strong bond with oxygen comprises aluminum.