| 发明名称 | Germanium antimony telluride materials and devices incorporating same | ||
| 摘要 | A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell. | ||
| 申请公布号 | US9190609(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201113698642 | 申请日期 | 2011.05.21 |
| 申请人 | ENTEGRIS, INC. | 发明人 | Zheng Jun-Fei |
| 分类号 | H01L45/00;C22C28/00;C23C16/30 | 主分类号 | H01L45/00 |
| 代理机构 | Hultquist, PLLC | 代理人 | Hultquist, PLLC ;Hultquist Steven J.;Chappuis Maggie |
| 主权项 | 1. A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45% Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the alloy composition total to 100 atomic %. | ||
| 地址 | Billerica MA US | ||