发明名称 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SUBSTRATE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning liquid that is used for a substrate for a semiconductor device, especially for a substrate for a semiconductor device having a metal wiring on the surface thereof in a cleaning process after a CMP process, has sufficient anticorrosion property against a metal wiring, can improve the compatibility with an object to be cleaned and polished, and can suppress scratch and abnormal oxidation on the substrate surface.SOLUTION: The substrate cleaning liquid for a semiconductor device is a cleaning composition liquid having a pH of 8 or higher which is used for cleaning a substrate for a semiconductor device having a Cu wiring and an insulation film having a low dielectric constant on the substrate surface after performing a chemical mechanical polishing, and includes a tetramethyl ammonium hydroxide, a diamine, an organic acid, a histidine or a derivative thereof, at least one kind selected from the group consisting of a benzotriazole, an imidazole, a triazole, a tetrazole and a derivative thereof, and water.
申请公布号 JP2015203047(A) 申请公布日期 2015.11.16
申请号 JP20140082190 申请日期 2014.04.11
申请人 MITSUBISHI CHEMICALS CORP 发明人 HARADA KEN;MIZUTANI BUNICHI
分类号 C11D7/32;C11D7/26;C11D7/50;C11D7/60;H01L21/304 主分类号 C11D7/32
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