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发明名称
SiC(碳化矽)基板之潜伤深度推断方法
摘要
本发明提供一种SiC基板的潜伤深度推定方法,包括蚀刻工序、计测工序和推定工序。在蚀刻工序中,对于至少表面由单晶SiC构成,并且进行了机械加工后的SiC基板,藉由在Si气氛下进行加热处理而对该SiC基板的表面进行蚀刻。在计测工序中,对进行了蚀刻工序的SiC基板的表面粗糙度或者残留应力进行计测。在推定工序中,基于在计测工序中得到的结果,推定蚀刻工序前的SiC基板的潜伤的深度或者有无潜伤。
申请公布号
TW201543593
申请公布日期
2015.11.16
申请号
TW104109740
申请日期
2015.03.26
申请人
东洋炭素股份有限公司 TOYO TANSO CO., LTD.
发明人
鸟见聡 TORIMI, SATOSHI;矢吹纪人 YABUKI, NORIHITO;野上暁 NOGAMI, SATORU
分类号
H01L21/66(2006.01);H01L21/461(2006.01);H01L21/02(2006.01)
主分类号
H01L21/66(2006.01)
代理机构
代理人
林志刚
主权项
地址
日本 JP
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