| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device in which lowering of the strength of an insulating film, due to formation of a cavity, can be suppressed, and to provide a method of manufacturing the same.SOLUTION: A compound semiconductor device includes an electron travel layer 120b, an electron supply layer 102d above the electron travel layer 120b, a gate electrode 105g above the electron supply layer 102d, a source electrode 105s and a drain electrode 105d, and a porous insulating film 109 covering the gate electrode 105g, source electrode 105s and drain electrode 105d, and containing an organic component having a cavity 113 formed around the gate electrode 105g. A cross-linking layer 112 is formed on the surface of the porous insulating film 109 on the cavity 113 side. |
