SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for suppressing thermally caused metal diffusion.SOLUTION: A semiconductor device includes: a semiconductor layer formed of a semiconductor; a first electrode layer Schottky-bonded to the semiconductor layer at at least a part thereof; a second electrode layer formed on the first electrode layer and suppressing metal diffusion; and a third electrode layer formed on the second electrode layer and used for wiring. The second electrode layer includes a molybdenum layer mainly formed of molybdenum and a vanadium layer mainly formed of vanadium.