METHODS OF SELECTIVE EPITAXIAL SILICON TRENCH FILLS

摘要

Provided is a method for selectively forming an epitaxial film on a surface of a substrate in comparison with a surface of a dielectric material. The substrate surfaces is capable of forming a target surface-terminating unit differentiated by pretreatment, and producing at least one protecting group by additionally reacting the target surface-terminating unit. The protecting group inhibits growth of a subsequent epitaxial film on the protected surface.