SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes adjacent first and second blocks of memory cells, wherein all the memory cells in each block are erased collectively and each of the blocks includes a plurality of stacks of memory cells above a semiconductor substrate, a dummy cell region including a plurality of stacks of dummy cells above the semiconductor substrate, a source line contact electrically connected to an upper wiring layer and through which a voltage is applied to a source line of the memory cells, and a substrate contact electrically connected to the upper wiring layer and through which a voltage is applied to the semiconductor substrate. The source line contact is disposed between the first and second blocks, and the substrate contact is separated from any of the stacks of memory cells by at least one stack of dummy cells.

主权项

1. A semiconductor memory device comprising:
a memory cell region including adjacent first and second blocks of memory cells, wherein all the memory cells in each block are erased collectively and each of the blocks includes a plurality of stacks of memory cells above a semiconductor substrate; a dummy cell region including a plurality of stacks of dummy cells above the semiconductor substrate; a source line contact electrically connected to an upper wiring layer and through which a voltage is applied to a source line of the memory cells, wherein the source line contact is in contact with the semiconductor substrate and disposed between the first and second blocks; and a substrate contact electrically connected to the upper wiring layer and through which a voltage is applied to the semiconductor substrate, wherein the substrate contact is in contact with the semiconductor substrate and is separated from any one of the stacks of memory cells by at least one stack of dummy cells.