| 摘要 |
In described examples, an electronic device includes a semiconductor structure (102) having a back end capacitor (122) and a back end thin film resistor (126). The semiconductor structure (102) includes a first dielectric layer (106), a bottom plate (134) of the capacitor (122) and a thin film resistor body (132). The bottom plate (134) and the resistor body (132) are laterally spaced apart portions of the same thin film layer (108). The bottom plate (134) further includes a conductive layer (110) overlying the thin film layer (108). A second dielectric layer (124) is disposed on the conductive layer (110) of the bottom plate (134) of the capacitor (122). A top plate (120) of the capacitor (122) is disposed on the second dielectric layer (124). |
