Power Semiconductor Device with Low RDSON and High Breakdown Voltage

摘要

A semiconductor structure is disclosed. The semiconductor structure includes a trench having substantially parallel trench sidewalls, and a tapered dielectric liner in the trench. The tapered dielectric liner includes slanted dielectric sidewalls. A conductive filler is enclosed by the slanted dielectric sidewalls in the trench.

主权项

1. A semiconductor structure comprising:
a trench having substantially parallel trench sidewalls; a tapered dielectric liner in said trench, said tapered dielectric liner having slanted dielectric sidewalls; a conductive filler enclosed by said slanted dielectric sidewalls.