发明名称 |
CRYSTALLINE MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE |
摘要 |
Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented. |
申请公布号 |
US2015325660(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201414578072 |
申请日期 |
2014.12.19 |
申请人 |
FLOSFIA INC. |
发明人 |
Hitora Toshimi;Oda Masaya;Takatsuka Akio |
分类号 |
H01L29/22;H01L33/28;H01L29/04 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
1. A crystalline multilayer structure comprising:
a metal layer containing a uniaxially oriented metal as a major component; and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component, wherein the crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented. |
地址 |
Kyoto-shi JP |