发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
In a semiconductor manufacturing method for performing thermal treatment of a substrate with plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, a second surface of the substrate is irradiated with the plasma of the plasma generating apparatus in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus. |
申请公布号 |
US2015325455(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201514682083 |
申请日期 |
2015.04.08 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
KITAGAWA DAI;OKUMURA TOMOHIRO |
分类号 |
H01L21/324;H01L21/67;H01L21/268 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor manufacturing method performing thermal treatment of a substrate by using plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, comprising:
irradiating a second surface of the substrate with the plasma in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus. |
地址 |
Osaka JP |