| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing an impurity concentration in a metal nitride film.SOLUTION: A manufacturing method of a semiconductor device has housing a substrate 200 in a processing chamber 201, and supplying a material gas containing a metal element, a nitrogen-containing gas, and a hydrogen-containing gas into the processing chamber 201 and forming a metal nitride film on the substrate 200. In the process of forming the metal nitride film, the material gas and the nitrogen-containing gas are intermittently supplied into the processing chamber 201, or the material gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber 201, or while the nitrogen-containing gas is continuously supplied into the processing chamber 201, the material gas is intermittently supplied into the processing chamber 201, and at least during a period in which the nitrogen-containing gas is supplied into the processing chamber 201, the hydrogen-containing gas is supplied into the processing chamber 201. |
