发明名称 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
摘要 A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, k1=0 or 1, and Z forms a 5 or 6-membered alicyclic ring. A resist composition comprising the polymer is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness during both alkaline development and organic solvent development.;
申请公布号 US2015323865(A1) 申请公布日期 2015.11.12
申请号 US201514697901 申请日期 2015.04.28
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Sagehashi Masayoshi;Fujiwara Takayuki;Hasegawa Koji;Taniguchi Ryosuke
分类号 G03F7/038;C07D307/935;G03F7/32;C07D495/04;C08F224/00;C08F228/06;C07D307/83;C07D493/04 主分类号 G03F7/038
代理机构 代理人
主权项 1. A monomer having the general formula (1): wherein R1 is hydrogen, methyl or trifluoromethyl, R2 and R3 are each independently hydrogen or a straight, branched or cyclic, monovalent hydrocarbon group of 1 to 10 carbon atoms, R2 and R3 may bond together to form an alicyclic group of 5 to 10 carbon atoms, which may be separated by an oxygen atom or have a carbon chain, with the carbon atom to which they are attached, X1 is a straight, branched or cyclic, divalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent —CH2— may be replaced by —O— or —C(═O)—, k1 is 0 or 1, and Z forms a 5 or 6-membered alicyclic group, which may contain a heteroatom, with the two carbon atoms to which it is attached.
地址 Tokyo JP