Semiconductor Devices and Methods of Forming Thereof

摘要

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

主权项

1. A semiconductor device comprising:
a first cavity disposed in a substrate having a first surface and an opposite second surface, the first cavity extending from a first surface into a substrate; a second cavity disposed in the substrate, the second cavity extending from the second surface to the first cavity to form a continuous cavity, wherein the first cavity comprises a first center point, wherein the second cavity comprises a second center point, wherein the first cavity at least partially overlaps the second cavity; and a moveable membrane layer disposed over the second surface of the substrate, wherein a moveable portion of the moveable membrane layer comprises a third center point, wherein the third center point and the second center point are aligned.