| 发明名称 |
POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
| 摘要 |
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer. |
| 申请公布号 |
US2015325653(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514806225 |
申请日期 |
2015.07.22 |
| 申请人 |
MagnaChip Semiconductor, Ltd. |
发明人 |
KIM Ho Hyun;HUR Seung Bae;SONG Seung Wook;PARK Jeong Hwan;YANG Ha Yong;KIM In Su |
| 分类号 |
H01L29/10;H01L29/08;H01L29/739 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer. |
| 地址 |
Cheongju-si KR |
