METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

摘要

In one embodiment, a method of forming a semiconductor device may include forming a buried region within a semiconductor region, including forming an opening in the buried region. The method may also include forming a drift region of a second conductivity type in the semiconductor region with at least a portion of the drift region overlying a first portion of the buried region. Another portion of the method may include forming a first drain region of the second conductivity type in the drift region wherein the first drain region does not overlie the buried region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first semiconductor region formed as a doped region overlying the semiconductor substrate; a drift region formed as a first doped region of a first conductivity type within the first semiconductor region and overlying the semiconductor substrate, the drift region having a first doping concentration; a first drain region formed as a second doped region of the first conductivity type within the drift region, the first drain region having a second doping concentration that is greater than the first doping concentration; a second drain region of the first conductivity type within the first drain region, the second drain region having a third doping concentration that is greater than the second doping concentration; a body region of a second conductivity type in the first semiconductor region and spaced laterally apart from the drift region; a source region of the first conductivity type in the body region; and a buried region of the second conductivity type underlying the source region, at least a portion of the body region, and at least a portion of the drift region but not underlying the first drain region and the second drain region.