| 摘要 |
The present invention relates to a non-volatile memory device with a vertical structure, capable of forming mass storage and high integration by reducing an area of a capacitor, as compared to the entire size of the device by forming a vertical type capacitor, comprising surrounding circuit areas. The device includes: a substrate including surrounding circuit areas and a cell area; a memory cell string including multiple vertical memory cells, formed in the cell area, and a channel hole, formed by penetrating the vertical memory cells in a first direction, vertical to the substrate; an insulating film formed in the surrounding circuit areas to have the same level as an upper surface level of the memory cell string; and multiple capacitor electrodes extended in parallel with the channel hole by penetrating at least part of the insulating film in the surrounding circuit areas in the first direction. The capacitor electrodes stay away from the substrate in a second direction. The insulating film is placed between a pair of capacitor electrodes, adjacent to each other, among the capacitor electrodes. |
