| 发明名称 |
CAPPED INDIUM OXIDE NANOCRYSTALS, PREPARATION METHOD THEREOF AND THIN FILM TRANSISTOR USING THE SAME |
| 摘要 |
The present invention provides a capped indium oxide nanoparticle, a production method thereof, and a thin-film transistor using the same. The capped indium oxide nanoparticle of the present invention has high charge-transfer ability and is water dispersible, thereby being highly applicable for a solution process. |
| 申请公布号 |
KR101567824(B1) |
申请公布日期 |
2015.11.11 |
| 申请号 |
KR20140130856 |
申请日期 |
2014.09.30 |
| 申请人 |
INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY |
发明人 |
JEONG, HYUN DAM;CHOI, JIN KYU |
| 分类号 |
C01G15/00;B82Y40/00 |
主分类号 |
C01G15/00 |
| 代理机构 |
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