| 摘要 |
<p>Methods and apparatuses for making a thermotunneling device. A method in accordance with the present invention comprises metal/semiconductor or semiconductor/semiconductor bonded material combinations that allows current flow between a hot plate and a cold plate of a thermoelectric device, and interrupting a flow of phonons between the hot plate and the cold plate of the thermoelectric device, wherein the interrupted flow is caused by a nanogap, said nanogap being formed by applying a small voltage or current between the two sides of the thermoelectric device.</p> |
