COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

摘要

A semiconductor device comprises an Si substrate (10) and a compound layer (11) of Si1-xGex disposed on the substrate (10). X is varied from 0 to 0.2 away from the substrate (10) towards the upper surface of the compound layer (11), with the rate of change of X increasing through the layer. The increasing rate of change of X significantly improves the defectivity levels and the surf ace roughness at the surf ace of layer (11).