| 摘要 |
PROBLEM TO BE SOLVED: To prevent the destruction of a semiconductor apparatus having an overcurrent protecting function by improving the thermosensitive speed of the apparatus by increasing the grounding surface of a semiconductor substrate with a MOSFET, in addition to its rear surface and the thermal conductivity from the MOSFET to a thermosensitive element by forming the thermosensitive element in the same semiconductor substrate in which the MOSFET is formed. SOLUTION: The MOSFET is formed in the semiconductor substrate 1 and, at the same time, the thermosensitive element 2 composed of a thyristor etc., is formed in an isolated area formed in the substrate 1 through an insulating film. The thermosensitive element 2 is connected between the gate and source or gate and input terminal of the MOSFET and, when the MOSFET abnormally generates heat, the thermosensitive element 2 is conducted and turns off the MOSFET by short-circuiting the gate and source or gate and input terminal of the MOSFET to each other. COPYRIGHT: (C)2006,JPO&NCIPI
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