| 摘要 |
<p>A silicon carbide substrate (30) includes: an n type drift layer (32) having a first surface (S1) and a second surface (S2) opposite to each other; a p type body region (33) provided in the first surface (S1) of the n type drift layer (32); and an n type emitter region (34) provided on the p type body region (33) and separated from the n type drift layer (32) by the p type body region (33). A gate insulating film (11) is provided on the p type body region (33) so as to connect the n type drift layer (32) and the n type emitter region (34) to each other. A p type Si collector layer (70) is directly provided on the silicon carbide substrate (30) to face the second surface (S2) of the n type drift layer (32).</p> |
