发明名称 Method and system for forming a membrane over a cavity
摘要 A method of fabricating a semiconductor device includes providing an assembly substrate including a split plane defining a handle region and a transfer region, a film layer coupled to the transfer region, and one or more active devices coupled to the film layer. The method also includes providing a device substrate including one or more bonding regions and joining the assembly substrate to the device substrate. The method further includes splitting the assembly substrate to remove the handle region.
申请公布号 US9184094(B1) 申请公布日期 2015.11.10
申请号 US201313750163 申请日期 2013.01.25
申请人 Skorpios Technologies, Inc. 发明人 Marchena Elton
分类号 H01L21/30;H01L33/00;H01L33/48;H01L21/78;H01L21/762;H01L21/764 主分类号 H01L21/30
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A method of fabricating a semiconductor device, the method comprising: providing an assembly substrate including a split plane defining a handle region and a transfer region, a film layer coupled to the transfer region, and one or more active devices coupled to the film layer; providing a device substrate including one or more bonding regions, wherein the one or more bonding regions include one or more receptor sites; joining the assembly substrate to the device substrate, wherein joining the assembly substrate to the device substrate comprises directly bonding the film layer to a portion of the device substrate and directly bonding the one or more active devices to the one or more receptor sites of the device substrate, and wherein at least a portion of the film layer is suspended over a cavity formed between the one or more active devices directly bonded to the one or more receptor sites and the portion of the device substrate directly bonded to the film layer; and splitting the assembly substrate to remove the handle region.
地址 Albuquerque NM US