Memory cells and methods of forming memory cells

摘要

Some embodiments include methods of forming memory cells. An opening is formed over a first conductive structure to expose an upper surface of the first conductive structure. The opening has a bottom level with a bottom width. The opening has a second level over the bottom level, with the second level having a second width which is greater than the bottom width. The bottom level of the opening is filled with a first portion of a multi-portion programmable material, and the second level is lined with the first portion. The lined second level is filled with a second portion of the multi-portion programmable material. A second conductive structure is formed over the second portion. Some embodiments include memory cells.

主权项

1. A method of forming a memory cell, comprising:
forming an opening within a single dielectric material over a first conductive structure to expose an upper surface of the first conductive structure, the opening having a bottom level with a bottom width along a cross-section; the opening having a second level over the bottom level, with the second level having a second width which is greater than the bottom width, the bottom level having bottom level sidewalls and the second level having second level sidewalls, the bottom level sidewalls and the second level sidewalls consisting of the single dielectric material; filling the bottom level of the opening with a first portion of a multi-portion programmable material, and lining the second level with the first portion of the multi-portion programmable material, the first portion of the multi-portion programmable material being in direct physical contact with the single dielectric material along the bottom level sidewalls and along the second level sidewalls; filling the lined second level with a second portion of the multi-portion programmable material; and forming a second conductive structure over the second portion of the multi-portion programmable material.