Deep ultraviolet light emitting diode

摘要

A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

主权项

1. A method of fabricating a light emitting heterostructure, the method comprising:
creating a design for the light emitting heterostructure based on a set of attributes of a polar optical phonon, wherein the light emitting heterostructure includes an n-type contact layer and a light generating structure including a plurality of quantum wells and having a first side adjacent to the n-type contact layer, and wherein the creating includes:
selecting materials for the n-type contact layer and a quantum well in the plurality of quantum wells based on an energy of the polar optical phonon in a material of the light generating structure, wherein a difference between a conduction band edge energy of the n-type contact layer and an electron ground state energy of the quantum well is greater than the energy of the polar optical phonon; andselecting a target width of the light generating structure based on a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure, wherein the target width is comparable to the mean free path; and fabricating the light emitting heterostructure according to the design.