发明名称 Bulk acoustic wave resonator
摘要 Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
申请公布号 US9184724(B2) 申请公布日期 2015.11.10
申请号 US201213430879 申请日期 2012.03.27
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Chul Soo;Ahn Dal;Shin Jae Shik;Song In Sang;Kim Duck Hwan;Son Sang Uk;Park Ho Soo
分类号 H03H9/02;H03H9/13 主分类号 H03H9/02
代理机构 NSIP Law 代理人 NSIP Law
主权项 1. A bulk acoustic wave resonator (BAWR), comprising: a bulk acoustic wave resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; and an anti-resonant frequency modifying unit configured to modify an anti-resonant frequency generated by the bulk acoustic wave resonance unit, based on a ground plane formed at a distance apart from the bulk acoustic wave resonance unit, wherein a distance between the first electrode and the ground plane and/or a distance between the second electrode and the ground plane has a respective value that is less than or equal to a thickness of the piezoelectric layer.
地址 Suwon-si KR