发明名称 |
Bulk acoustic wave resonator |
摘要 |
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit. |
申请公布号 |
US9184724(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201213430879 |
申请日期 |
2012.03.27 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Chul Soo;Ahn Dal;Shin Jae Shik;Song In Sang;Kim Duck Hwan;Son Sang Uk;Park Ho Soo |
分类号 |
H03H9/02;H03H9/13 |
主分类号 |
H03H9/02 |
代理机构 |
NSIP Law |
代理人 |
NSIP Law |
主权项 |
1. A bulk acoustic wave resonator (BAWR), comprising:
a bulk acoustic wave resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; and an anti-resonant frequency modifying unit configured to modify an anti-resonant frequency generated by the bulk acoustic wave resonance unit, based on a ground plane formed at a distance apart from the bulk acoustic wave resonance unit, wherein a distance between the first electrode and the ground plane and/or a distance between the second electrode and the ground plane has a respective value that is less than or equal to a thickness of the piezoelectric layer. |
地址 |
Suwon-si KR |