| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a high heat resistance performance having a semiconductor element using a wide band gap semiconductor such as SiC. <P>SOLUTION: A semiconductor device comprises: an insulation substrate; a metal block fixed to the insulation substrate; a plurality of semiconductor elements fixed to the metal block and using a wide band gap semiconductor; a plurality of implant pins fixed to the semiconductor elements; a printed board fixed to the implant pins and arranged so as to be opposed to the semiconductor elements; and a sealing material at least arranged between the semiconductor elements and the printed board and including a filler having the maximum grain size of 100μm. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
