Semiconductor structures with bridging films and methods of fabrication

摘要

Semiconductor structures and fabrication methods are provided having a bridging film which facilitates adherence of both an underlying layer of dielectric material and an overlying stress-inducing layer. The method includes, for instance, providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate; providing a bridging film over the layer of dielectric material with the at least one gate structure; and providing a stress-inducing layer over the bridging film. The bridging film is selected to facilitate adherence of both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.

主权项

1. A method comprising:
fabricating a semiconductor structure, the fabricating comprising:
providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate;providing a bridging film over the layer of dielectric material with the at least one gate structure disposed therein; andproviding a stress-inducing layer over the bridging film, wherein the bridging film is selected to facilitate adherence to both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.