Nanoscale switching device

摘要

A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.

主权项

1. A nanoscale switching device comprising:
a first electrode of a nanoscale width; a second electrode of a nanoscale width; a third electrode of a nanoscale width, wherein the second electrode and the third electrode are arranged parallel with respect to each other an active region disposed between the first and second electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field; a resistance modifier layer disposed between the second and third electrodes, the resistance modifier layer having a non-linear voltage-dependent resistance; a write voltage source for applying a write voltage to change a state of said active region, said write voltage source being connected so as to apply said write voltage to and between said first and second electrodes, such that said write voltage is applied across said active region without being applied across said resistance modifier layer; and a read voltage source for applying a read voltage to ascertain a state of said active region, said read voltage source being connected so as to apply said read voltage between said first and third electrodes.