Heat treatment apparatus for heating substrate by light irradiation

摘要

The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.

主权项

1. A heat treatment apparatus for heating a substrate by irradiating said substrate with light, said heat treatment apparatus comprising:
a chamber configured to receive a substrate; a holding part configured to hold the substrate within said chamber; a quartz window arranged at one end of said chamber; a halogen lamp configured to irradiate one side of the substrate held on said holding part with light through said quartz window; a temperature detection part configured to receive an infrared ray emitted from the other side of the substrate held on said holding part, and two-dimensionally detect the temperature of said the other side; an infrared-transparent window arranged at the other end of said chamber and configured to allow an infrared ray in a wavelength region detectable by said temperature detection part to transmit therethrough; and a temperature correction part configured to, based on a result of the detection obtained by said temperature detection part, heat a temperature drop region having a relatively low temperature among a region of the substrate held on said holding part.