Methods of operating a magnetic memory device

摘要

Provided is a data writing method of a magnetic memory device. The method may include flowing first and second currents near left and right sides, respectively, of a selected memory cell to apply an ambient magnetic field to the selected memory cell. Here, directions of the first and second currents may be anti-parallel to each other.

主权项

1. A data writing method of a magnetic memory device, comprising:
flowing first and second currents near left and right sides, respectively, of a selected memory cell to apply an ambient magnetic field to the selected memory cell, wherein directions of the first and second currents are anti-parallel to each other; wherein the magnetic memory device further comprises: a selected bit line connected to the selected memory cell; left wiring lines provided at a left side of the selected bit line; right wiring lines provided at a right side of the selected bit line; non-selected memory cells provided at left and right sides of the selected memory cell; and each of the left and right wiring lines serves as a non-selected bit line electrically connecting some of the non-selected memory cells arranged along a direction parallel to the selected bit line, wherein the first current is formed to flow through at least one of the left wiring lines adjacent to the selected bit line, and the second current is formed to flow through at least one of the right wiring lines adjacent to the selected bit line.