| 发明名称 | Compound semiconductor device and method of manufacturing the same | ||
| 摘要 | An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure of nitride over the substrate; a passivation film that covers the compound semiconductor stacked structure; a gate electrode, a source electrode, and a drain electrode at a level above the compound semiconductor stacked structure; and an Si—C bond containing film that contains an Si—C bond and includes a part between the source electrode and the drain electrode. The part contacts at least a part of an upper surface of the compound semiconductor stacked structure or at least a part of an upper surface of the passivation film. | ||
| 申请公布号 | US9184273(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201414205740 | 申请日期 | 2014.03.12 |
| 申请人 | FUJITSU LIMITED | 发明人 | Makiyama Kozo |
| 分类号 | H01L31/0312;H01L21/338;H01L29/778;H01L23/29;H01L23/31;H01L29/66;H01L29/40;H01L29/43;H01L29/51;H01L29/20 | 主分类号 | H01L31/0312 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A compound semiconductor device, comprising: a substrate; a compound semiconductor stacked structure of nitride over the substrate; a passivation film that covers the compound semiconductor stacked structure; a gate electrode, a source electrode, and a drain electrode at a level above the compound semiconductor stacked structure; and an Si—C bond containing film that contains an Si—C bond and includes a part between the source electrode and the drain electrode, the part contacting at least a part of an upper surface of the compound semiconductor stacked structure or at least a part of an upper surface of the passivation film, wherein the Si—C bond containing film contains a methyl group. | ||
| 地址 | Kawasaki JP | ||