NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATION AND READ METHODS THEREOF

摘要

A method for operating a nonvolatile memory device which includes plural strings which are connected between a bit line and a common source line and includes pillars which penetrate word lines vertically stacked on a substrate includes the following steps: a step of setting floated word lines; a step of applying at least one word line voltage required for the set word lines; and a step of floating the word lines with a recovery voltage.