发明名称 Integrated circuit fuse and method of fabricating the integrated circuit fuse
摘要 A fuse formed as part of an integrated circuit has cavities disposed to the sides of the fuse to provide more reliable operation with less chance of re-connection. A method of providing the fuse is also described.
申请公布号 US9184012(B2) 申请公布日期 2015.11.10
申请号 US201213720098 申请日期 2012.12.19
申请人 Allegro Microsystems, LLC 发明人 Wang Yigong
分类号 H01H85/48;H01H69/02;H01H85/00;H01H85/041;H01H85/46 主分类号 H01H85/48
代理机构 Daly, Crowley, Mofford & Durkee, LLP 代理人 Daly, Crowley, Mofford & Durkee, LLP
主权项 1. A fuse disposed over a substrate of an integrated circuit, comprising: a conductive trace in a fuse-level metal layer of the integrated circuit, wherein the conductive trace comprises a fusible portion having a higher resistance than other portions of the conductive trace, and wherein the fusible portion comprises a longest dimension; a dielectric structure disposed over the fusible portion and beyond the fusible portion in a direction parallel to a major surface of the substrate; and a first cavity into the dielectric structure, the first cavity configured to capture debris from the fusible portion when the fusible portion is fused, wherein the first cavity is proximate to the fusible portion and separated from the fusible portion by a first separation wall, wherein the first cavity has a depth to at least a depth of the fuse-level metal layer with a deeper direction being in a direction toward the substrate, wherein the entire first cavity is disposed to a first side of the fusible portion in a direction parallel to a major surface of the substrate and perpendicular to the longest dimension of the fusible portion such that no part of the first cavity is over the fusible portion, wherein the first separation wall has a thickness selected to result in fracture, the fracture causing a fracture opening in the first separation wall and capture of debris from the fusible portion within the first cavity when the fusible portion is fused.
地址 Worcester MA US