发明名称 |
Nonvolatile memory devices with on die termination circuits and control methods thereof |
摘要 |
Non-volatile memory devices including on-die termination circuits connected to an input/output circuit and an on-die termination control logic detecting a preamble of a strobe signal based on a command and a control signal and activating the on-die termination within the preamble period. |
申请公布号 |
US9183901(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201113286713 |
申请日期 |
2011.11.01 |
申请人 |
Samsung Electronics, Co., Ltd. |
发明人 |
Kim Chul Bum;Kang Sangchul;Ryu Jinho;Kwon Seokcheon |
分类号 |
G11C7/10;G11C5/06 |
主分类号 |
G11C7/10 |
代理机构 |
Harness, Dickey & Pierce |
代理人 |
Harness, Dickey & Pierce |
主权项 |
1. A nonvolatile memory device, comprising:
a nonvolatile memory element; an on-die termination circuit in the nonvolatile memory element and connected with an input/output circuit; and an on-die termination control logic configured to detect a preamble period of a strobe signal based upon a command and a control signal and to activate the on-die termination circuit during the preamble period, wherein the on-die termination control logic includes: a first on-die termination controller circuit configured to activate the on-die termination circuit in response to a write operation state signal; and a second on-die termination controller circuit configured to activate the on-die termination circuit in response to a read operation state signal. |
地址 |
Gyeonggi-do KR |