发明名称 Nonvolatile memory devices with on die termination circuits and control methods thereof
摘要 Non-volatile memory devices including on-die termination circuits connected to an input/output circuit and an on-die termination control logic detecting a preamble of a strobe signal based on a command and a control signal and activating the on-die termination within the preamble period.
申请公布号 US9183901(B2) 申请公布日期 2015.11.10
申请号 US201113286713 申请日期 2011.11.01
申请人 Samsung Electronics, Co., Ltd. 发明人 Kim Chul Bum;Kang Sangchul;Ryu Jinho;Kwon Seokcheon
分类号 G11C7/10;G11C5/06 主分类号 G11C7/10
代理机构 Harness, Dickey & Pierce 代理人 Harness, Dickey & Pierce
主权项 1. A nonvolatile memory device, comprising: a nonvolatile memory element; an on-die termination circuit in the nonvolatile memory element and connected with an input/output circuit; and an on-die termination control logic configured to detect a preamble period of a strobe signal based upon a command and a control signal and to activate the on-die termination circuit during the preamble period, wherein the on-die termination control logic includes: a first on-die termination controller circuit configured to activate the on-die termination circuit in response to a write operation state signal; and a second on-die termination controller circuit configured to activate the on-die termination circuit in response to a read operation state signal.
地址 Gyeonggi-do KR