| 发明名称 | Resistance variable memory cell structures and methods | ||
| 摘要 | Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure. | ||
| 申请公布号 | US9184377(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201313915228 | 申请日期 | 2013.06.11 |
| 申请人 | Micron Technology, Inc. | 发明人 | Joshi Sachin V.;Gealy F Daniel |
| 分类号 | H01L21/62;H01L45/00;H01L27/24 | 主分类号 | H01L21/62 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. An array of resistance variable memory cells, comprising: a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure; and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure. | ||
| 地址 | Boise ID US | ||