| 摘要 |
Provided are a method for growing single crystals and a device for growing single crystals, whereby large-sized single crystals can be grown at a low cost. In one embodiment of the present invention, provided is a method for growing single crystals, said method comprising: a step for heating a die (10) provided with a throughhole (11), wherein a first opening (11a) of the throughhole (11) and a second opening (11b) thereof are formed respectively in a first surface (10a) and a second surface (10b); a step for bringing a starting material (21) for a sintered compact relatively close to the die (10) along a first direction, contacting the starting material (21) with the first surface (10a) of the heated die (10) to thereby melt the same, and moving a melt (23) thus formed from the first opening (11a) of the throughhole (11) to the second opening (11b) thereof by the capillary phenomenon; and a step for contacting the melt (23) reaching the second opening (11b) with a seed crystal (22) and then relatively separating the seed crystal (22) from the die (10) along a second direction to thereby grow a single crystal (20). |
