System and Method for Lithography Exposure With Correction of Overlay Shift Induced By Mask Heating

摘要

A method of exposing a wafer substrate includes receiving an integrated circuit (IC) design layout defining a pattern; determining a temperature profile of a mask based on the IC design layout, the pattern being formed on the mask; calculating a pre-corrected overlay shift for the mask based on the calculated temperature profile; and exposing a resist layer coated on a substrate using the mask with overlay compensation based on the pre-corrected overlay shift.

主权项

1. A method comprising:
prior to performing a process on a substrate, determining a temperature of a mask that is predicted to occur during the performing of the process of the substrate, calculating an overlay shift for the mask based on the temperature of the mask that is predicted to occur during the performing of the process of the substrate; and forming a patterned resist layer on the substrate using the mask with overlay compensation based on the calculated overlay shift.