PHASE CHANGE MEMORY

摘要

A phase change memory comprises a storage node. The storage node comprises: a lower electrode (1), used for being connected to a substrate; a first phase-change layer (2), located on the lower electrode; a second phase-change layer (2), stacked on the first phase-change layer; and an upper electrode (4), located on the second phase-change layer. The storage node stores different data according to different resistance values of the first phase-change layer and the second phase-change layer. Because no isolation layer is disposed between the second phase-change layer and the first phase-change layer, the process complexity of manufacturing the storage node is lowered and production costs of the storage node are also reduced.