发明名称 |
Semiconductor Devices Including Polar Insulation Layer Capped by Non-Polar Insulation Layer |
摘要 |
Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer. |
申请公布号 |
US2015318358(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514800694 |
申请日期 |
2015.07.15 |
申请人 |
Williams John R.;Ahyi Ayayi C.;Isaacs-Smith Tamara F.;Sharma Yogesh K.;Feldman Leonard C. |
发明人 |
Williams John R.;Ahyi Ayayi C.;Isaacs-Smith Tamara F.;Sharma Yogesh K.;Feldman Leonard C. |
分类号 |
H01L29/16;H01L21/04;H01L21/02;H01L29/51;H01L29/423 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Opelika AL US |