| 摘要 |
An organic display device includes a pixel driving circuit having a TFT connected to a current supply line and a capacitor. A first insulation layer, with a first electrode thereon, covers a source electrode of the TFT. The first electrode is connected to the TFT through a contact hole in the insulation layer. A second insulation layer including an aperture is formed on the first insulation layer and electrode layers. An organic light emitting layer, with a second electrode thereon is formed in the aperture and connected to the first electrode. The second insulation layer includes an inner wall at the aperture, said inner wall having a surface of a convex plane on an edge of the recessed part of the first electrode. The convex plane is located between the organic light emitting layer and the edge of the first electrode, and the second electrode is formed over pixels. |
| 主权项 |
1. A display device comprising:
a substrate; an under layer which is formed on the substrate and includes a first insulation layer and a thin film transistor comprising a semiconductor layer, a gate electrode, and a gate insulation film between the semiconductor layer and the gate electrode; a first electrode on the first insulation layer; a second insulation layer which is formed on the first insulation layer and the first electrode and has a contact hole exposing a part of the first electrode; a second electrode which is formed on the second insulation layer and is connected to the first electrode through the contact hole; a third insulation layer which is formed on the second insulation layer and the second electrode, which has an aperture exposing a first part of the second electrode, and which covers all edge of the second electrode; an organic layer which is formed on the third insulation layer and an inner wall of the aperture and includes a light emitting layer; a third electrode on the organic layer; a light emitting element which includes the first part of the second electrode overlapping the aperture in plan view, a first part of the organic layer overlapping the aperture in plan view and connected to the first part of the second electrode, and a first part of the third electrode overlapping the aperture in plan view and connected to the first part of the organic layer, wherein an edge portion of the third insulation layer which is connected to the second electrode and organic layer and is arranged outside the light emitting element in plan view, a second part of the second electrode is arranged on an inner wall of the contact hole, a first portion of the third insulation layer which is arranged in the contact hole and is connected to the organic layer, each of the organic layer and the third electrode layer overlaps the contact hole, the second part of the second electrode, and the first portion of the third insulation layer in plan view, the contact hole, the second part of the second electrode, and the first portion of the third insulation layer are arranged outside the light emitting element in plan view, the light emitting element emits light in a direction from the substrate to the third electrode, and each of the light emitting element and the edge portion of the third insulation layer overlaps the semiconductor layer of the thin film transistor in plan view. |
