Method of Forming an Embedded Memory Device

摘要

The present disclosure describes a method of forming a memory device. The method includes receiving a wafer substrate, forming a poly stack pattern on the wafer substrate, performing an ion implantation process to form a source and a drain in the wafer substrate, forming a memory gate and a control gate in the defined poly stack pattern, and forming a control gate in the control poly stack pattern. Forming the memory gate further includes performing a memory gate recess to bury the memory gate in an oxide layer.

主权项

1. A memory structure, the structure comprising:
a wafer substrate; a source formed in the wafer substrate; a drain formed in the wafer substrate; and a poly stack pattern disposed over the source at one end of the poly stack pattern and over the drain at another end of the poly stack pattern, wherein the poly stack pattern includes a memory gate over the source and a control gate over the drain.