发明名称 インターポーザ構造体及び半導体装置の製造方法
摘要 PROBLEM TO BE SOLVED: To provide an interposer structure capable of easily removing a support substrate while suppressing damage on an interposer, and a manufacturing method or the like of a semiconductor device.SOLUTION: The interposer structure includes an interposer 120 and a support substrate 110 supporting the interposer 120. The support substrate 110 includes a substrate 111, a heating element 112 on the substrate 111 and a resin layer 113, that covers the heating element 112, on the substrate 111. When manufacturing the semiconductor device, the interposer structure is fixed on a printed circuit board, a current is made to flow to the heating element 112, an interface of the heating element 112 with the resin layer 113 is oxidized, and the substrate 111 and the heating element 112 are removed. The resin layer 113 is removed thereafter, and a semiconductor chip is mounted on the interposer 120.
申请公布号 JP2015195324(A) 申请公布日期 2015.11.05
申请号 JP20140073419 申请日期 2014.03.31
申请人 富士通株式会社 发明人 神吉 剛司;菊池 遼
分类号 H01L23/32;H01L23/12 主分类号 H01L23/32
代理机构 代理人
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