| 发明名称 |
Gate Boosting Transmission Gate |
| 摘要 |
A gate-boosting transmission gate includes an input node and an output node. An n-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold. A p-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold. |
| 申请公布号 |
US2015318853(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514703720 |
申请日期 |
2015.05.04 |
| 申请人 |
Microsemi SoC Corporation |
发明人 |
McCollum John L. |
| 分类号 |
H03K17/687;H01L27/092 |
主分类号 |
H03K17/687 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gate-boosting transmission gate comprising:
an input node; an output node; an n-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold; and a p-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold. |
| 地址 |
San Jose CA US |
