发明名称 |
SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS |
摘要 |
A semiconductor device has at least a cell between two opposite main surfaces. Each cell has a first device feature region contacted with the first main surface and a second device feature region contacted with the second main surface. There is a voltage-sustaining region between the first device feature region and the second device feature region, which includes at least a semiconductor region and an insulator region containing conductive region(s). The semiconductor region and the insulator region contact directly with each other. The structure of such voltage-sustaining region can not only be used to implement high-voltage devices, but further be used as a junction edge technique of high-voltage devices. |
申请公布号 |
US2015318346(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514796206 |
申请日期 |
2015.07.10 |
申请人 |
CHEN XINGBI |
发明人 |
CHEN XINGBI |
分类号 |
H01L29/06;H01L29/732;H01L29/868;H01L29/74;H01L29/78;H01L29/872;H01L29/40;H01L29/739 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising a first main surface and a second main surface opposite to said first main surface, wherein at least a cell is located between said first main surface and said second main surface, wherein said cell has a first device feature region contacted with said first main surface and a second device feature region contacted with said second main surface; wherein a voltage-sustaining region is located between said first device feature region and said second device feature region, wherein said voltage-sustaining region includes at least a semiconductor region and an insulator region having at least a conductive region inside, said insulator region having at least a conductive region is called as (I+C)-region; wherein said semiconductor region and said (I+C)-region contact directly each other;
said semiconductor device comprising at least two electrodes, wherein one electrode is contacted directly with a portion or the total of said first main surface, another electrode is contacted directly with a portion or the total of said second main surface, and said two electrodes are located outside of the region between said first main surface and said second main surface. |
地址 |
CHENGDU CITY CN |