发明名称 SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS
摘要 A semiconductor device has at least a cell between two opposite main surfaces. Each cell has a first device feature region contacted with the first main surface and a second device feature region contacted with the second main surface. There is a voltage-sustaining region between the first device feature region and the second device feature region, which includes at least a semiconductor region and an insulator region containing conductive region(s). The semiconductor region and the insulator region contact directly with each other. The structure of such voltage-sustaining region can not only be used to implement high-voltage devices, but further be used as a junction edge technique of high-voltage devices.
申请公布号 US2015318346(A1) 申请公布日期 2015.11.05
申请号 US201514796206 申请日期 2015.07.10
申请人 CHEN XINGBI 发明人 CHEN XINGBI
分类号 H01L29/06;H01L29/732;H01L29/868;H01L29/74;H01L29/78;H01L29/872;H01L29/40;H01L29/739 主分类号 H01L29/06
代理机构 代理人
主权项 1. A semiconductor device, comprising a first main surface and a second main surface opposite to said first main surface, wherein at least a cell is located between said first main surface and said second main surface, wherein said cell has a first device feature region contacted with said first main surface and a second device feature region contacted with said second main surface; wherein a voltage-sustaining region is located between said first device feature region and said second device feature region, wherein said voltage-sustaining region includes at least a semiconductor region and an insulator region having at least a conductive region inside, said insulator region having at least a conductive region is called as (I+C)-region; wherein said semiconductor region and said (I+C)-region contact directly each other; said semiconductor device comprising at least two electrodes, wherein one electrode is contacted directly with a portion or the total of said first main surface, another electrode is contacted directly with a portion or the total of said second main surface, and said two electrodes are located outside of the region between said first main surface and said second main surface.
地址 CHENGDU CITY CN