| 发明名称 |
METHOD AND APPARATUS FOR LASER DICING OF WAFERS |
| 摘要 |
A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency. |
| 申请公布号 |
US2015318210(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201414265672 |
申请日期 |
2014.04.30 |
| 申请人 |
International Business Machines Corporation |
发明人 |
BUDD RUSSELL A.;Dang Bing;Knickerbocker John U. |
| 分类号 |
H01L21/78;B23K26/36;H01L21/67;H01L21/304;H01L21/268;H01L21/306 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
cutting a semiconductor wafer on a substrate wafer by at least one laser; and setting said at least one laser to a set of parameters defining a laser beam, said laser beam avoiding ablation of said substrate wafer, wherein said laser beam is set equal to or within an ablation threshold of said semiconductor wafer for selectively ablating said semiconductor wafer; and wherein said set of parameters includes wavelength, pulse width and pulse frequency. |
| 地址 |
Armonk NY US |
