发明名称 PLASMA DRY STRIP PRETREATMENT TO ENHANCE ION IMPLANTED RESIST REMOVAL
摘要 Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light.
申请公布号 US2015316857(A1) 申请公布日期 2015.11.05
申请号 US201414268455 申请日期 2014.05.02
申请人 Lam Research Corporation 发明人 Berry, III Ivan L.;Gilchrist Glen
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method for processing a substrate, comprising: exposing a substrate to UV light from a UV light source having a predetermined wavelength range, wherein the substrate includes a photoresist layer that has been bombarded with ions; controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature; and after exposing the substrate to the UV light, removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature.
地址 Fremont CA US