发明名称 |
PLASMA DRY STRIP PRETREATMENT TO ENHANCE ION IMPLANTED RESIST REMOVAL |
摘要 |
Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light. |
申请公布号 |
US2015316857(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201414268455 |
申请日期 |
2014.05.02 |
申请人 |
Lam Research Corporation |
发明人 |
Berry, III Ivan L.;Gilchrist Glen |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for processing a substrate, comprising:
exposing a substrate to UV light from a UV light source having a predetermined wavelength range, wherein the substrate includes a photoresist layer that has been bombarded with ions; controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature; and after exposing the substrate to the UV light, removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature. |
地址 |
Fremont CA US |