| 发明名称 |
VACUUM SUCTION STAGE, SEMICONDUCTOR WAFER DICING METHOD, AND SEMICONDUCTOR WAFER ANNEALING METHOD |
| 摘要 |
<p>The present invention is intended to provide a vacuum suction stage that suppresses damage on a dicing tape during dicing and a method of dicing a semiconductor wafer using the vacuum suction stage. The present invention is further intended to provide a method of annealing a semiconductor wafer using the vacuum suction stage that suppresses bubble formation in a grinding protection tape. The vacuum suction stage of the present invention includes a placement surface 1a on which a semiconductor wafer 6 is to be placed. A vacuum suction hole 2 is formed in the placement surface 1a only in an area external to a chip region 6a of the semiconductor wafer 6.</p> |
| 申请公布号 |
EP2827362(A4) |
申请公布日期 |
2015.11.04 |
| 申请号 |
EP20120871254 |
申请日期 |
2012.03.12 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
MATSUMURA TAMIO |
| 分类号 |
H01L21/301;H01L21/02;H01L21/265;H01L21/268;H01L21/67;H01L21/683;H01L21/78 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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