| 发明名称 |
PROCESSES FOR PREPARING HETEROSTRUCTURES WITH REDUCED STRAIN BY RADIAL COMPRESSION |
| 摘要 |
Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. |
| 申请公布号 |
EP2939258(A1) |
申请公布日期 |
2015.11.04 |
| 申请号 |
EP20130821774 |
申请日期 |
2013.12.30 |
| 申请人 |
SUNEDISON SEMICONDUCTOR LIMITED |
发明人 |
FALSTER, ROBERT J.;VORONKOV, VLADIMIR V.;PITNEY, JOHN A.;ALBRECHT, PETER D. |
| 分类号 |
H01L21/02;H01L21/322;H01L21/463;H01L21/687 |
主分类号 |
H01L21/02 |
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